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this is information on a product in full production. july 2013 docid13853 rev 3 1/16 stf15nm65n, STFI15NM65N, stp15nm65n n-channel 650 v, 0.35 typ., 12 a mdmesh? ii power mosfets in to-220fp, i2pakfp and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. to-220 to-220fp 1 2 3 tab 1 2 3 1 2 3 i pakfp 2 $0y '7$% * 6 order codes v dss @t jmax r ds(on) max. i d stf15nm65n 710 v 0.38 12 a STFI15NM65N stp15nm65n table 1. device summary order codes marking packages packaging stf15nm65n 15nm65n to-220fp tube STFI15NM65N i 2 pakfp (to-281) stp15nm65n to-220 www.st.com
contents stf15nm65n, STFI15NM65N, stp15nm65n 2/16 docid13853 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid13853 rev 3 3/16 stf15nm65n, STFI15NM65N, stp15nm65n electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp, i 2 pakfp to-220 v ds drain source voltage 650 v v gs gate source voltage 25 v i d drain current continuous tc=25 c 12 (1) 1. limited by maximum junction temperature. 12 a i d drain current continuous tc=100 c 7.56 7.56 a i dm (2) 2. pulse width limited by safe operating area. drain current pulsed 48 48 a p tot total dissipation at tc=25 c 30 125 w dv/dt (3) 3. i sd 12 a, di/dt 400 a/ s, v dspeak v (br)dss, v dd = 80 % v (br)dss . peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms from all three leads to external heatsink (t=1 s; t c =25 c) 2500 v t j operating junction temperature -55 to 150 c t sg storage temperature c table 3. thermal data symbol parameters value unit to-220fp, i 2 pakfp to-220 r thjc thermal resistance junction-case 4.17 1.0 c/w r thja thermal resistance junction-ambient 62.5 c/w table 4. avalanche characteristics symbol parameters value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by t jmax ) 3a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50 v) 187 mj
electrical characteristics stf15nm65n, STFI15NM65N, stp15nm65n 4/16 docid13853 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage, v gs = 0 i d = 1 ma 650 v l dss zero gate voltage drain current (v gs =0) v dd = 650 v 1 a v dd = 650 v, t c = 125 c 100 a l gss gate body leakage (v ds =0) v gs = 25 v 100 na v gs(th) gate threshold voltage i d =250 a, v gs= v ds 234 v r ds(on) static r ds(on) -resistance i d =6 a, v gs =10v 0.35 0.38 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =50 v, f=1mhz, v gs =0 -983- pf c oss output capacitance - 57 - pf c rss reverse capacitance - 4.5 - pf c osseq (1) 1. cross eq: defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80 % v dss. equivalent out. capacitance v ds =0 v to v gs =0 - 146 - pf r g intrinsic gate resistance f=1mhz open drain - 4.6 - q g total gate charge v dd =520 v, i d =12 a, v gs =10 v - 33.3 - nc q gs gate source charge - 5.7 - nc q gd gate-drain charge - 17 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =325 v, i d =6 a r g =4.7 , v gs =10 v - 55.5 - ns t r rise time - 8.5 - ns t d(off) turn-off-delay time - 14 - ns t f fall time - 11.4 - ns
docid13853 rev 3 5/16 stf15nm65n, STFI15NM65N, stp15nm65n electrical characteristics 16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source drain current - 12 a i sdm (1) 1. pulse width limited by safe operating area. source drain current (pulsed) -48a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 12 a, v gs = 0 v - 1.6 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/ s v dd = 60 v - 428 ns q rr reverse recovery charge -4.7 nc i rrm reverse recovery current - 21.5 a t rr reverse recovery time i sd =12 a, di/dt=100 a/ s v dd =60 v, t j =150 c - 570 ns q rr reverse recovery charge -6.2 nc i rrm reverse recovery current -22 a
electrical characteristics stf15nm65n, STFI15NM65N, stp15nm65n 6/16 docid13853 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am10307v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am10306v1 figure 6. output characteristics figure 7. transfer characteristics i d 15 10 5 0 0 6 v ds (v) 10 (a) 2 8 12 20 25 5v 6v v gs =10v 4 14 16 18 20 22 am10308v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 10 20 25 v ds =19v am10309v1
docid13853 rev 3 7/16 stf15nm65n, STFI15NM65N, stp15nm65n electrical characteristics 16 figure 8. static drain-source on-resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on-resistance vs temperature figure 13. source-drain diode forward characteristics r ds(on) 0.345 0.340 0.335 0.330 0 4 i d (a) ( ) 2 6 0.350 0.355 0.360 0.365 v gs =10v 10 8 12 am10311v1 v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480v i d =12a 25 12 300 200 100 0 400 500 v ds v ds (v) am03195v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am10313v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am10314v1 r ds(on) 0.5 0.7 -50 0 t j (c) (norm) -25 75 25 50 100 0.9 1.1 1.3 1.5 1.7 1.9 2.1 i d =6a v gs =10v am10315v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c 12 1.4 am10316v1
electrical characteristics stf15nm65n, STFI15NM65N, stp15nm65n 8/16 docid13853 rev 3 figure 14. normalized v ds vs temperature v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1
docid13853 rev 3 9/16 stf15nm65n, STFI15NM65N, stp15nm65n test circuits 16 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf15nm65n, STFI15NM65N, stp15nm65n 10/16 docid13853 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid13853 rev 3 11/16 stf15nm65n, STFI15NM65N, stp15nm65n package mechanical data 16 figure 21. to-220fp drawing 7012510_rev_k_b
package mechanical data stf15nm65n, STFI15NM65N, stp15nm65n 12/16 docid13853 rev 3 figure 22. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 uhy$
docid13853 rev 3 13/16 stf15nm65n, STFI15NM65N, stp15nm65n package mechanical data 16 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stf15nm65n, STFI15NM65N, stp15nm65n 14/16 docid13853 rev 3 figure 23. to-220 type a drawing bw\sh$b5hyb7
docid13853 rev 3 15/16 stf15nm65n, STFI15NM65N, stp15nm65n revision history 16 5 revision history table 12. document revision history date revision changes 11-may-2011 1 initial release. 21-jun-2011 2 document status promoted form preliminary data to datasheet, added section 2.1: electrical characteristics (curves) . 17-jul-2013 3 ? added: i 2 pakfp package ? added: table 10 and figure 22 ? updated: section 4: package mechanical data ? minor text changes
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